Title:
SiCウエハ、SiC半導体デバイス、および、SiCウエハの製造方法
Document Type and Number:
Japanese Patent JP4185215
Kind Code:
B2
Inventors:
Hiroyuki Matsunami
Tsunenobu Kimoto
Hiroshi Shiomi
Tsunenobu Kimoto
Hiroshi Shiomi
Application Number:
JP12747199A
Publication Date:
November 26, 2008
Filing Date:
May 07, 1999
Export Citation:
Assignee:
Hiroyuki Matsunami
Tsunenobu Kimoto
Sumitomo Electric Industries, Ltd.
Tsunenobu Kimoto
Sumitomo Electric Industries, Ltd.
International Classes:
C30B29/36; H01L29/74; C30B25/20; H01L21/04; H01L21/205; H01L21/28; H01L29/04; H01L29/24; H01L29/47; H01L29/749; H01L29/78; H01L29/861; H01L29/872
Domestic Patent References:
| JP9301799A | ||||
| JP5007016A | ||||
| JP11068097A | ||||
| JP59048792B1 | ||||
| JP62214613A | ||||
| JP10067600A | ||||
| JP2804860B2 |
Foreign References:
| US5923058 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Toyotaka Abe
Tatsuya Shioda
Shiro Terasaki
Toyotaka Abe