SILICA-BASED FILM, METHOD OF FORMING SILICA-BASED FILM, AND ELECTRONIC COMPONENT HAVING SILICA-BASED FILM

Title:

SILICA-BASED FILM, METHOD OF FORMING SILICA-BASED FILM, AND ELECTRONIC COMPONENT HAVING SILICA-BASED FILM

Document Type and Number:

Japanese Patent JP2001098224

Kind Code:

A

Abstract:

To provide a silica-based film applicable as a layer insulating film, that exhibits sufficient operating performance even in semiconductor elements whose design rule is finer than 0.15 μm, a method of forming a silica-based film that can produce easily in a high yield a silica-based film applicable as a layer insulating film for semiconductor devices such as LSI, etc., and multilayer interconnection boards, that exhibits sufficient operating performance even in semiconductor elements whose design rule is finer than 0.15 μm, and an electronic component for semiconductor devices such as LSI, etc., and multilayer interconnection boards, that has the above-described silica-based film, causes less delay of signals, and is highly graded and reliable.

A silica-based film having a film density of 1.5 (g/cm3) or less, a method of forming a silica-based film having a film density of 1.5 (g/cm3) or less, which method comprises coating a base material with a composition formed by dissolving a void-forming material (a) and a siloxane oligomer (b) uniformly in an organic solvent (c) to form a composite film in which the void-forming material and the siloxane oligomer are uniformly compatibilized, and carrying out the condensation reaction of the oligomer and the removal of the void-forming material, and an electronic component having the above silica-based film are provided.

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Inventors:

SAKURAI HARUAKI
ENOMOTO KAZUHIRO
NOBE SHIGERU
NARITA TAKENORI
TERADA NOBUKO
MORISHIMA HIROYUKI

Application Number:

JP27412099A

Publication Date:

April 10, 2001

Filing Date:

September 28, 1999

Export Citation:

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Assignee:

HITACHI CHEMICAL CO LTD

International Classes:

B05D7/24; C01B33/12; C08G77/04; C08J9/26; C08L83/04; C08L101/00; C09D133/06; C09D183/02; C09D183/06; C09D201/00; H01L21/312; H01L21/316; H01L21/768; H01L23/522; (IPC1-7): C09D201/00; B05D7/24; C08G77/04; C08J9/26; C08L83/04; C08L101/00; C09D133/06; C09D183/02; H01L21/312

Domestic Patent References:

JPH1025359A	1998-01-27
JP2001002993A	2001-01-09
JP2001049179A	2001-02-20

Foreign References:

WO1999003926A1

1999-01-28

Attorney, Agent or Firm:

Kunihiko Wakabayashi

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