To provide a silica-based film applicable as a layer insulating film, that exhibits sufficient operating performance even in semiconductor elements whose design rule is finer than 0.15 μm, a method of forming a silica-based film that can produce easily in a high yield a silica-based film applicable as a layer insulating film for semiconductor devices such as LSI, etc., and multilayer interconnection boards, that exhibits sufficient operating performance even in semiconductor elements whose design rule is finer than 0.15 μm, and an electronic component for semiconductor devices such as LSI, etc., and multilayer interconnection boards, that has the above-described silica-based film, causes less delay of signals, and is highly graded and reliable.
A silica-based film having a film density of 1.5 (g/cm3) or less, a method of forming a silica-based film having a film density of 1.5 (g/cm3) or less, which method comprises coating a base material with a composition formed by dissolving a void-forming material (a) and a siloxane oligomer (b) uniformly in an organic solvent (c) to form a composite film in which the void-forming material and the siloxane oligomer are uniformly compatibilized, and carrying out the condensation reaction of the oligomer and the removal of the void-forming material, and an electronic component having the above silica-based film are provided.
ENOMOTO KAZUHIRO
NOBE SHIGERU
NARITA TAKENORI
TERADA NOBUKO
MORISHIMA HIROYUKI
JPH1025359A | 1998-01-27 | |||
JP2001002993A | 2001-01-09 | |||
JP2001049179A | 2001-02-20 |
WO1999003926A1 | 1999-01-28 |
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