Title:
炭化珪素半導体装置および炭化珪素半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6953876
Kind Code:
B2
Abstract:
A silicon carbide semiconductor device includes a semiconductor substrate of a first conductivity type; an active region in which a main current flows provided on the semiconductor substrate; a termination region disposed outside of the active region and in which a voltage withstanding structure is formed; and a damaged region disposed outside the termination region and in which crystallinity is impaired, the damaged region being exposed at a cut surface that is formed when singulation is performed.
Inventors:
Yasuyuki Hoshi
Yuichi Hashizume
Keishiro Kumada
Yuichi Hashizume
Keishiro Kumada
Application Number:
JP2017152024A
Publication Date:
October 27, 2021
Filing Date:
August 04, 2017
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/301; H01L21/336; H01L29/06; H01L29/12; H01L29/872
Domestic Patent References:
| JP2015220334A | ||||
| JP2015032789A | ||||
| JP2015019014A | ||||
| JP2005074485A |
Foreign References:
| WO2017046868A1 |
Attorney, Agent or Firm:
Akinori Sakai