SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

Japanese Patent JP2022077729

A

To suppress fluctuations in a threshold voltage and to suppress the occurrence of cracks in a barrier metal in a silicon carbide semiconductor device.SOLUTION: A silicon carbide semiconductor device 101 is divided into a cell region 1 and a sense cell region adjacent to the cell region 1 in a plan view, and includes a silicon carbide substrate 11, a semiconductor layer 12 formed on the silicon carbide substrate 11, a gate electrode 18 facing the semiconductor layer 12 via a gate insulating film 26, an interlayer insulating film 19 covering the gate electrode 18, a barrier metal formed on the interlayer insulating film 19 in the cell region 1, and a top electrode covering the barrier metal, and the barrier metal has a two-layer structure composed of a barrier metal 21 and a barrier metal 22, and the barrier metal 21 on the interlayer insulating film 19 side is made of the same metal as the barrier metal 22 and has a smaller thickness than the barrier metal 22.SELECTED DRAWING: Figure 2

WO/2021/257311	A FINFET WITH LATERAL CHARGE BALANCE AT THE DRAIN DRIFT REGION
JP3813577	METHOD OF MANUFACTURING SHORT CHANNEL TRANSISTOR OF SEMICONDUCTOR DEVICE

NOGUCHI TOMOAKI
NAKANISHI YOSUKE

JP2020188705A

May 24, 2022

November 12, 2020

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MITSUBISHI ELECTRIC CORP

H01L29/78; H01L21/28; H01L21/283; H01L21/3205; H01L21/336; H01L21/768; H01L29/06; H01L29/12; H01L29/417

Hidetoshi Yoshitake
Takahiro Arita

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