SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

Japanese Patent JP2022121327

A

To provide a silicon carbide semiconductor device and a manufacturing method of a silicon carbide semiconductor device, enabling accurate selection of a device whose Von fluctuates after a body diode is energized by improving Von measurement accuracy.SOLUTION: In a first region within 30 μm from the cross section of a silicon carbide semiconductor device, the roughness Rp of the back surface of the silicon carbide semiconductor device is 4 μm or less, and in a second region other than the first region, the roughness Rp of the back surface of the silicon carbide semiconductor device is 2 μm or less. A manufacturing method of a silicon carbide semiconductor device comprises: defining the roughness Rp of the back surface of the silicon carbide semiconductor device having a MOS gate structure; then measuring the on-voltage of the silicon carbide semiconductor device; flowing a forward current through a body diode of the silicon carbide semiconductor device; then measuring the on-voltage of the silicon carbide semiconductor device after the forward current is flowed; then calculating the change rate of the on-voltage of the silicon carbide semiconductor device from the on-voltage before and after the forward current is applied; and then selecting silicon carbide semiconductor device having a calculated rate of change lower than 3%.SELECTED DRAWING: Figure 1

MIYASATO MAKI
UCHIUMI MAKOTO

JP2021018623A

August 19, 2022

February 08, 2021

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FUJI ELECTRIC CO LTD

H01L21/336; H01L21/66; H01L29/12; H01L29/78

Akinori Sakai

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