PURPOSE: To obtain a silicon laminate which has excellent electrical characteristics and moreover can be applied, as it is, to a solar cell, a photosensor and others.

CONSTITUTION: This silicon laminate 10 is constructed of a heat-resistant metal base 11 constituted of Mo, a conductive ground film 12 formed on the surface of this base and constituted of Ni, an SiC film 13 and an SiCx film 14 (0<x<1) formed sequentially on the surface of the ground film and a polycrystalline silicon film 15 made on the SiCx film 14. According to this silicon laminate 10, diffusion of a metal component from the heat-resistant metal base 11 or the conductive ground film 12 into the polycrystalline silicon film 15 is prevented by an action of the SiC film 13 being a stoichiometric compound and an epitaxial growth of the polycrystalline silicon film 15 on the SiCx film 14 is enabled by an action of this film. Therefore the silicon laminate which has excellent electrical characteristics and moreover can be applied, as it is, to a solar cell, a photosensor, etc., can be obtained.