Title:
低ウェットエッチング速度の窒化シリコン膜
Document Type and Number:
Japanese Patent JP5269093
Kind Code:
B2
Abstract:
The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.
Inventors:
Mungekah, Heman, Pee.
Woo, gin
Lee, Yong, S.
One, Anchuan
Woo, gin
Lee, Yong, S.
One, Anchuan
Application Number:
JP2010539811A
Publication Date:
August 21, 2013
Filing Date:
December 18, 2008
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/318; C23C16/42; H01L21/306; H01L21/31
Domestic Patent References:
| JP2002151514A | ||||
| JP2003059918A | ||||
| JP2006278580A | ||||
| JP2006120992A | ||||
| JP11288932A | ||||
| JP2007305981A |
Foreign References:
| WO2008117798A1 |
Attorney, Agent or Firm:
Sonoda Yoshitaka
Kobayashi Yoshinori
Kobayashi Yoshinori