Title:
SILICON PHOTOELECTRIC DEVICE AND LIGHT EMITTING APPARATUS USING THE SAME
Document Type and Number:
Japanese Patent JP3825358
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device.
SOLUTION: The silicon optoelectronic device includes: a substrate 11 based on an n-type or p-type silicon; a doped region 15 formed on one surface of the substrate 11 and doped to an ultra-shallow depth with a predetermined dopant to be an opposite type from that of the substrate 11 to provide a photoelectrical conversion effect by quantum confinement in a p-n junction between the doped region and the substrate 11; and 1st and 2nd electrodes 17 and 19 formed on the substrate to be electrically connected to the doped region. The silicon optoelectronic device may further includes a control layer 13 formed on one surface of the substrate to act as a mask in forming the doped region and to limit the depth of the doped region to be ultra-shallow. The silicon optoelectronic device has excellent efficiency and can be used as either a light-emitting device or a light-receiving device. Since the optoelectronic device uses silicon, it can be manufactured at low cost.
Inventors:
Cui Byung Dragon
Noboru Minami
Lee Ginkyo
Liu Zhou Ho
Kim Shun Ei
Noboru Minami
Lee Ginkyo
Liu Zhou Ho
Kim Shun Ei
Application Number:
JP2002114452A
Publication Date:
September 27, 2006
Filing Date:
April 17, 2002
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L33/24; H01L31/10; H01L33/06; H01L33/34; (IPC1-7): H01L33/00; H01L31/10
Domestic Patent References:
| JP2002359398A |
Attorney, Agent or Firm:
Yukio Ono
Tomoko Inazumi
Tomoko Inazumi