Title:
SILICON WAFER AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2010283022
Kind Code:
A
Abstract:
To secure sufficient gettering capability even when a device is made thinner and to prevent injection atoms from affecting a device active layer and deteriorating device characteristics.
A method of manufacturing a silicon wafer includes: an injection step; and an injection peak layer removal step of removing an injection peak layer from the surface of the wafer up to a peak layer including a peak position where the concentration of injection elements injected is at its peak in the direction of wafer thickness and containing 50-98% of the injection element. A gettering layer is formed which has the peak of the gettering capability corresponding to a depth position deeper than the peak position of the concentration of the injection element.
Inventors:
TORIGOE KAZUNAO
ADACHI HISASHI
ASAYAMA HIDEKAZU
MOTOYAMA TAMIO
NAGABUCHI AKIRA
ADACHI HISASHI
ASAYAMA HIDEKAZU
MOTOYAMA TAMIO
NAGABUCHI AKIRA
Application Number:
JP2009133179A
Publication Date:
December 16, 2010
Filing Date:
June 02, 2009
Export Citation:
Assignee:
SUMCO CORP
International Classes:
H01L21/322; H01L21/02; H01L27/12
Attorney, Agent or Firm:
Masatake Shiga
Tadashi Takahashi
Yasuhiko Murayama
Tadashi Takahashi
Yasuhiko Murayama