To provide composites of silicon carbide and a process for manufacture of this composite.
The films of the silicon carbide are laminated and formed by a CVD method, etc., on the surfaces of the base material parts of the silicon carbide by a bulk method, such as sintering, pressing by heating. These composite are suitable for use with a plasma reactor 10 and more particularly an oxide etching device used for production of semiconductors and are the parts for the wall surfaces of a chamber 12, the ceiling surface 26 of the chamber, collars enclosing wafers 14, etc. In expensive and secure supporting structures of intricate shapes are obtainable by bulk SiC and may be made adaptable to special applications convenient for a plasma process by the film of the SiC formed by CVD. The composite structure of the SiC is particularly useful as the separate setting of the electroconductivity of the bulk SiC and the SiC of the film is possible. There are many utilization possibilities in addition to grounding surface and windows for RF electromagnet radiation and to both thereof.
HAN NIANCI
YIN GERALD Z
WU ROBERT W
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