SINGLE CRYSTAL GROWTH APPARATUS AND SINGLE CRYSTAL GROWTH METHOD USING THE APPARATUS

Japanese Patent JP2016041638

A

PROBLEM TO BE SOLVED: To provide a single crystal growth apparatus capable of growing a silicon single crystal having high resistivity, and a single crystal growth method using the apparatus.SOLUTION: A single crystal growth apparatus 1 is provided that includes in a main chamber 5, a silicon thin rod insertion unit 9 capable of inserting each of a plurality of silicon thin rods 8 containing dopant independently into raw material melt 2 and melting the thin rods 8. A silicon single crystal growth method using the single crystal growth apparatus 1 is provided that includes: a sample crystal growth step of growing a sample crystal after melting a raw material in a quartz crucible 3 and of measuring a conductivity type and resistivity of the sample crystal; a determination step for determination of a conductivity type and an insertion amount of the silicon thin rod 8, of determining a conductivity type and an insertion amount of the silicon thin rod 8 to be inserted into the raw material melt 2, based on the measured results; a silicon thin rod melting step of inserting a determined amount of the silicon thin rod 8 of a determined conductivity type into the raw material melt 2, and melting the silicon thin rod 8, thereby adjusting an amount of the dopant in the raw material melt 2 and adjusting the resistivity of a silicon single crystal 6; and a silicon single crystal pulling step.SELECTED DRAWING: Figure 1

HOSHI RYOJI
KAMATA HIROYUKI

JP2014166415A

March 31, 2016

August 19, 2014

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SHINETSU HANDOTAI KK

C30B29/06; C30B15/04

JP2002226295A	2002-08-14
JPS61163188A	1986-07-23
JPS5979000A	1984-05-08

Mikio Yoshimiya

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