Title:
単結晶体の製造方法および単結晶体製造装置
Document Type and Number:
Japanese Patent JP7061911
Kind Code:
B2
Abstract:
To provide a method for manufacturing a single crystal body, capable of improving crystal quality and stabilizing a yield when simultaneously growing a plurality of single crystal bodies.SOLUTION: A method for manufacturing a single crystal body 5 by an EFG method comprises steps of: charging the raw material of the single crystal body 5 into a crucible 1 to induction-heat and melt the raw material in the crucible 1 by a high frequency coil 3 surrounding the outer periphery of the crucible 1; and arranging seed crystals 6 on a plurality of molten liquid surfaces supplied and held on the upper surface of a die 2 arranged in the crucible 1, respectively, to grow a plurality of single crystal bodies 5 while pulling the seed crystals 6 in the vertical direction from the plurality of molten liquid surfaces. A relative position between the die 2 and the high frequency coil 3 is controlled so that the temperature distribution of the plurality of molten liquid surfaces is uniform.SELECTED DRAWING: Figure 2
Inventors:
Yamashiro Mamoru
Application Number:
JP2018068422A
Publication Date:
May 02, 2022
Filing Date:
March 30, 2018
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
C30B15/24; C30B29/06; C30B29/16; C30B29/20
Domestic Patent References:
| JP2007532458A | ||||
| JP52143978A | ||||
| JP2016516658A | ||||
| JP56164099A |
Attorney, Agent or Firm:
Toshikazu Fukai
Yousuke Tsushima
Shigeyuki Waseda
Yousuke Tsushima
Shigeyuki Waseda
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