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Title:
単結晶の製造方法
Document Type and Number:
Japanese Patent JP6645406
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a single crystal producing method according to the Czochralski method for enabling measurement of a liquid level position of a molten liquid precisely.SOLUTION: At a single crystal pulling-up step of pulling up a single crystal 15 from a molten liquid in a crucible 11, there are detected the individual edge patterns of the real image of an in-pile structure 17 and the mirror image of the in-pile structure 17 reflected on a liquid face 13a of a molten liquid 13, which are photographed by a camera 18 disposed on the outer side of a chamber 19 at the time when the in-pile structure 17 inside the chamber 19 and the liquid face of the molten liquid are photographed obliquely downward. On the basis of an installation angle θand a focal distance f of the camera, the individual edge patterns of the real image and the mirror image of the in-pile structure 17 are projected and converted onto a reference plane. From the shape of the reference pattern, of which the matching ratio becomes the maximum when the pattern matching is performed upon the individual edge patterns of the real image and the mirror image of the in-pile structure 17 on a reference plane, there are calculated the individual representative sizes of the real image and the mirror image of the in-pile structure 17.SELECTED DRAWING: Figure 1

Inventors:
Keiichi Takanashi
Takeshi Hamada
Ippei Shimozaki
Shimizu Taijun
Application Number:
JP2016235290A
Publication Date:
February 14, 2020
Filing Date:
December 02, 2016
Export Citation:
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Assignee:
Sumco inc.
International Classes:
C30B29/06; C30B15/00; G01B11/00; G01B11/04; G01B11/14
Domestic Patent References:
JP2007031175A
JP2016121023A
JP2012126585A
Attorney, Agent or Firm:
Mitsuhiro Washito
Ogata Japanese
Yasuyuki Kurose