PURPOSE: To enable the thickness of SiO2 thin films in minute regions to be rapidly and readily measured by making use of the changes in the intensity ratios of characteristic X-rays between SiKα3 and SiKα4 caused by the film thicknesses of the SiO2 films.
CONSTITUTION: An electron ray 1 is converged by an electron lens 2 and is scanned over the surface of the sample 4 which is mounted on a sample holder 6 and is placed on a sample drive unit 5, by a deflecting coil 3. The SiKα3 spectrum out of the characteristic X-rays respectively radiated from the SiO2 thin film and Si underlayer are separated by spectral crystals 7, 8. At this time, the combinations of the crystal 8 and detector 10, the crystal 7 and detecror 11 are moved on the circumference of a Rowland circle 9 by interlocking mechanisms 14, 15, whereby the peak positions of the SiKα3 spectrum and SiKα4 spectrum are obtained. The intensities of both spectra are measured with the detectors 10, 11 and the results of measurement are inputted to an arithmetic circuit 12. The SiO2 film thickness is then displayed in a display circuit 13.
WATANABE MASAHIRO
HIRATSUKA YUTAKA
| JPS4812304A |