Title:
SOLAR BATTERY
Document Type and Number:
Japanese Patent JPS58121688
Kind Code:
A
Abstract:
PURPOSE:To improve the conversion efficiency of a solar battery by forming many concaves and convexes on an n type GaAs substrate and forming by epitaxial grown a p-n junction on the substrate, thereby reducing the reflection loss of solar light. CONSTITUTION:An n type GaAs single crystal substrate 11 of (100) plane is etched to form V-shaped grooves on the surface of the substrate, and p type GaAs layer 12, p type Ga0.2Al0.8As layer 13 is epitaxially grown on the substrate. Thus, the layers 12, 13 are formed in V-shaped grooves, an electrode 14 is covered on the crests of the layer 13, and a reflection preventive layer 15 is then formed. This film 15 is also formed in V-shaped grooves. In the solar battery which is thus formed, the substantially equal V-shaped grooves to the V- shaped grooves on the substrate 11 are formed on the photoreceiving surface, and the reflection loss of the solar light can be accordingly reduced.
Inventors:
ITOU YOSHIO
KAMIMURA ZEIO
KAMIMURA ZEIO
Application Number:
JP325382A
Publication Date:
July 20, 1983
Filing Date:
January 14, 1982
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L31/042; H01L31/0216; H01L31/0236; H01L31/18; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Yoshikazu Tani