Title:
太陽電池セルおよび太陽電池セルの製造方法
Document Type and Number:
Japanese Patent JP6410951
Kind Code:
B2
Abstract:
A solar cell includes an n-type semiconductor substrate having a p-n junction and a back-surface side impurity-diffusion layer. The back-surface side impurity-diffusion layer is formed on a light-receiving surface of the semiconductor substrate or surface layer on a back-surface side opposite to the light-receiving surface, and has back-surface side high-concentration impurity-diffusion layers each of which contains an n-type or p-type impurity element at a first concentration and a back-surface side low-concentration impurity-diffusion layer which contains an impurity element of the same conductivity type as a conductivity type of the back-surface side high-concentration impurity-diffusion layers at a second concentration lower than the first concentration. The solar cell includes back-surface first electrodes formed at locations on a back-surface of the semiconductor substrate and electrically connected to the back-surface side high-concentration impurity-diffusion layers and back-surface second electrodes electrically connecting the back-surface first electrodes while being separated from the back-surface side impurity-diffusion layer.
Inventors:
Hayato Kobata
Application Number:
JP2017537069A
Publication Date:
October 24, 2018
Filing Date:
August 28, 2015
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L31/0224; H01L31/068
Domestic Patent References:
| JP2015106585A | ||||
| JP2000340812A | ||||
| JP2014067870A |
Foreign References:
| WO2014098016A1 | ||||
| US20130298975 | ||||
| WO2009157079A1 | ||||
| WO2013009373A1 | ||||
| WO2015068248A1 | ||||
| WO2015087472A1 |
Attorney, Agent or Firm:
Jun Takamura