To increase the sensitivity for short wavelength light in the case when a photodiode used is of an embedded structure.

The device comprises a first conductive type semiconductor substrate 11, a plurality of second conductive type storing layers 12 formed on the substrate 11 for storing signal charges upon incidence of light, a plurality of first conductive type surface layers 13 formed on the upper surfaces of the storing layers 12, and signal transfer means 15, 16 and 17. Here, the junction depth between the layers 13 and 12 is adjusted to 0.067 to 0.2 μm. With this structure, the sensitivity for short wavelengths can be improved. Further, the surface depth of a depletion region is adjusted to 0.2 to 0.3 μm in the state of complete depletion. With this structure, the improvement of the sensitivity for short wavelengths and the suppression of dark current noise can be achieved in a well balanced way.