Title:
Solid imaging device
Document Type and Number:
Japanese Patent JP5936554
Kind Code:
B2
Abstract:
A solid-state imaging device 10 includes a photodetecting section 20 including pixels P 1,1 to P M,N each including a transistor 21 and a photodiode 22, readout wiring lines R 1 to R N connected to the transistors 21, a signal output section 40 for sequentially outputting voltage values according to the amounts of charges input through the respective readout wiring lines R 1 to R N , potential change switches 50 for switching the potentials of the readout wiring lines R 1 to R N to a potential Vdr different from input potentials of integration circuits 42 of the signal output section 40, and a controlling section 6. The controlling section 6 switches potentials of the readout wiring lines R 1 to R N to the different potential Vdr for a predetermined period included in a period, after an elapse of a readout period where voltage values corresponding to the amounts of charges generated in the pixels P 1,1 to P M,N are sequentially output from the signal output section 40, until a next readout period is started. Accordingly, a solid-state imaging device capable of enhancing the detection accuracy of incident light in the respective pixels is realized.
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Inventors:
Kazuki Fujita
Ryuji Hisashima
Osamu Mori
Ryuji Hisashima
Osamu Mori
Application Number:
JP2012553582A
Publication Date:
June 22, 2016
Filing Date:
December 20, 2011
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H04N5/357; H01L27/144; H01L27/146; H04N5/374
Domestic Patent References:
| JP2007057535A | 2007-03-08 | |||
| JP2007312361A | 2007-11-29 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Satoru Ishida
Yoshiki Kuroki
Satoru Ishida
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