To provide a solid state image pickup device and a manufacturing method of the same, which can achieve a high drive frequency and high photo sensitivity, and ensure sufficient MTF (Modulation Transfer Function).
A solid state image pickup device 300 comprises: a silicon substrate 301; a plurality of photoelectric conversion parts 503 which are two-dimensionally arranged on the silicon substrate 301; a vertical CCD part 509 for transferring electric charge generated in each photoelectric conversion part 503 in an X direction; and a horizontal CCD part 510 for transferring electric charge transferred by the vertical CCD part 509 in a Y direction. The vertical CCD part 509 includes a thin film silicon electrode 511 of a film thickness T1 which is formed along the Y direction so as to cover light-receiving areas of the photoelectric conversion parts 503; and a thick film silicon electrode 512 of a film thickness T2 larger than the film thickness T1, which is formed along the Y direction on the photoelectric conversion parts 503 other than the light-receiving areas. The thin film silicon electrode 511 and the thick film silicon electrode 512 are electrically connected with each other.
Mitsuo Tanaka
Mikio Takeuchi