Title:
固体撮像素子及び撮像装置
Document Type and Number:
Japanese Patent JP5061915
Kind Code:
B2
Abstract:
A sensor is provided. The sensor includes semiconductor layer; a photodiode, an impurity-doped polycrystalline silicon layer; and a gate electrode. The photodiode is formed in the semiconductor layer. The impurity-doped polycrystalline silicon layer is formed above the semiconductor layer. The gate electrode applies a gate voltage to the polycrystalline silicon layer. A wiring layer is provided on a first surface of the semiconductor layer and light is incident on a second surface thereof.
Inventors:
Kiyoshi Takeuchi
Application Number:
JP2008009474A
Publication Date:
October 31, 2012
Filing Date:
January 18, 2008
Export Citation:
Assignee:
ソニー株式会社
International Classes:
G01J3/32; H01L27/146; H01L31/10; H04N9/07
Domestic Patent References:
| JP2005010114A | ||||
| JP2005268643A | ||||
| JP2007059755A |
Foreign References:
| WO2004113854A1 |
Attorney, Agent or Firm:
Yoshitsuno Kakuda
Hitoshi Ito
Hitoshi Ito