To provide a solid-state imaging apparatus which has high sensitivity and suppresses the generation of color mixture, and method for manufacturing the same.
In the solid-state imaging apparatus, division walls 109 are erected on a substrate 101 via an insulating film 107 in the state of having a gap between each other. A lower electrode 110 is formed along an inner wall of a recess part defined by adjacent division walls 109 and a surface of the insulating film 107. Namely the lower electrode 110 is configured that a bottom wall part formed on the surface of the insulating film 107 and a side wall part erected along a side face of the division wall 109 from both edge parts of the bottom wall are integrally formed, and has a recessed sectional shape as a whole. The lower electrode 110 is made from a metal material such as W, Pt or Al, and has light blocking effect. A division wall 109 consists of a metal core part made from W, Al, or Cu, Cr, and an oxide film formed on its outer periphery.
| JPS60136222 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
| JP2008147259 | IMAGING ELEMENT AND DEVICE |
| JPH05207486 | SOLID-STATE IMAGE PICKUP DEVICE |
HIROFUJI YUICHI
Kobayashi Kunito
Koji Kawabata
Koichi Kimura
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