Title:
SOLID STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP3737089
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a solid state imaging device manufacturing method which can improve sensitivity of a solid state imaging device while restraining generation of a dark current, and manufacture easily a solid state imaging device in which wiring is not damaged by etching treatment.
SOLUTION: A light receiving part 12 is formed on a semiconductor substrate 1, a first insulating film 6 is formed on a light receiving part 12 and a substrate 1, a metal film for wiring is formed on the first insulating film 6, a protective film 8 is formed on the metal film, a resist film is formed in a prescribed region of the protective film, a part of the protective film 8 and each metal film are eliminated by using the resist film, wiring 7 is formed whose upper part is covered with the protective film 8, a second insulating film 10 containing hydrogen is formed on the wiring 7 and the first insulating film 6, heat treatment is performed to the second insulating film 10, and anisotropic etching treatment is performed to the whole surface of the second insulating film 10, thereby eliminating the second insulating film 10.
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Inventors:
Rieko Nishio
Kuriyama Shunkan
Kuriyama Shunkan
Application Number:
JP2003149597A
Publication Date:
January 18, 2006
Filing Date:
May 27, 2003
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L27/14; H01L21/00; H01L21/3213; H01L27/148; (IPC1-7): H01L27/14; H01L21/3213; H01L27/148
Domestic Patent References:
| JP2001267547A | ||||
| JP2002016134A |
Attorney, Agent or Firm:
Shiro Ogasawara