To provide a high sensitivity solid-state imaging device that solves a problem of destruction having conventionally been caused through application of a voltage over a puncture voltage to its transistor component because the high sensitivity element requires a thick photoelectric conversion film and a voltage over the withstand voltage of the transistor component is to be applied to the film.
A bias voltage is applied to a source of a MOS transistor of a CMOS circuit section being a component of the solid-state imaging device and destruction of the device is prevented by escaping signal electric charges supplied from the photoelectric conversion film and stored in the drain of the transistor to a substrate of the CMOS circuit section when the voltage applied to the drain of the transistor reaches a prescribed voltage.
YAMAUCHI MASAHITO
MOROHOSHI MITSUZO
HAYASHIDA TETSUYA
WATABE TOSHIHISA
KOKUBU HIDEKI
WATANABE TOSHIHIDE
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