Title:
SOLID-STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS
Document Type and Number:
Japanese Patent JP2020013817
Kind Code:
A
Abstract:
To provide a solid-state imaging element capable of improving area efficiency and an electronic apparatus.SOLUTION: The solid-state imaging element includes: a semiconductor substrate having a photoelectric conversion unit for each pixel; a pixel transistor provided on one surface of the semiconductor substrate; and an element isolation portion, provided on the semiconductor substrate, for defining an active region of the pixel transistor including a first element isolation portion and a second element isolation portion having mutually different configurations. On a side surface of the second element isolation portion, in a depth direction of the second element isolation portion, a first semiconductor region and a second semiconductor region having mutually different impurity concentrations are included.SELECTED DRAWING: Figure 1
Inventors:
MASAGAKI ATSUSHI
Application Number:
JP2018133271A
Publication Date:
January 23, 2020
Filing Date:
July 13, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP
International Classes:
H01L27/146; H01L21/76; H01L31/10; H04N5/374
Attorney, Agent or Firm:
Patent Business Corporation Tsubasa International Patent Office