PURPOSE: To provide a solid-state image sensing device provided with a horizontal charge transfer section enhanced in transfer efficiency for signal charge.

CONSTITUTION: A first P-type well layer which forms a horizontal charge transfer section 103 and a vertical charge transfer section 102 is formed inside a second P-type well layer which forms a photoelectric conversion 101 taking advantage of an impurity concentration difference between them, wherein an electric field enhancing region 105 is formed in a region where no second P-type well layer is formed in the horizontal charge transfer section 103. A solid-state image sensing device of this constitution can be enhanced in transfer efficiency for signal charge by the electrical field enhancing region 105.