PURPOSE: To obtain image information with high resolution, by providing each photoelectric conversion storage part with plural charge transfer gates.
CONSTITUTION: Charge storage parts SA1...SAn, and SK1...SKn are each made of a photoelectric conversion part such as a photodiode to store image picture which corresponds to a subject therein. Charge transfer gates GA1...GAn, and GU1...GUn transfer signal charges, stored in the storage parts SA1...SKn, to vertical shift registers VA, VB, VC...VS, VG, and VU. The image information transferred through those vertical shift registers enters a vertical shift register HR, wherein it is transferred successively and horizontally by horizontal shifting pulses H1 and H2; and the information is converted into voltage information through the charge voltage converting circuit composed of FETs F1 and F2 and a resistance 1, and the resulting information is outputted as video information VF.
KINOSHITA TAKAO
SATOU YUUICHI
NEMOTO TAKASHI
