Title:
SOS SUBSTRATE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPS57210622
Kind Code:
A
Abstract:
PURPOSE:To lower a processing temperature, shorten a processing time and reduce manufacturing cost, by single-crystallizing only a necessary island-shaped region on a sapphire substrate. CONSTITUTION:An amorphous silicone or polycrystalline silicon film 20 is deposited on a sapphire substrate 1. The film 20 is removed leaving only a necessary region 21. Only island-shaped region 21 is annealed and single-crystallized on such conditions that only film thickness is effectively heated by laser annealing or pulsating heating.
Inventors:
HASHIMOTO SHINGO
Application Number:
JP9512381A
Publication Date:
December 24, 1982
Filing Date:
June 19, 1981
Export Citation:
Assignee:
CITIZEN WATCH CO LTD
International Classes:
H01L27/12; H01L21/20; H01L21/86; (IPC1-7): H01L21/263; H01L21/86; H01L27/12
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