PURPOSE: To generate ion of every kind with high efficiency and high yield, by forming a thin film by sputtering a target with the ion utilized plasma or by forming the ion for etching by utilizing sputtering by high density plasma.

CONSTITUTION: 2.45GHz micro wave is introduced into a plasma forming chamber 1 through a window 6. The plasma forming chamber 1 has a specified diameter and a specified length to form a cavity resonator of microwave. Two target 5, 5 facing each other and impressed with minus high voltage are arranged in the chamber and an electro magnet 8 for generating mirror field is fitted to the chamber at the side of the target. A grid 4 for taking out the ion is set at the opposite side of the waveguide 7 of the plasma forming chamber 1. Plasma 10 is formed by introducing gaseous Ar into the plasma forming chamber 1 and the generated gaseous Ar ion is subjected to collide against the cathode of the target 5. Then the ion generated with the target 5 of every kind is taken out as the uniform ion beam 9 through the grid 4 and is utilized for forming thin film or etching.