SOURCE MATERIAL FOR MANUFACTURING SINGLE CRYSTAL SiC, METHOD FOR MANUFACTURING THE SAME, METHOD FOR MANUFACTURING SINGLE CRYSTAL SiC USING THE SOURCE MATERIAL, AND SINGLE CRYSTAL SiC OBTAINED BY THE METHOD

Japanese Patent JP2008037720

A

To provide a source material for manufacturing single crystal SiC and a method for manufacturing the source material that can be smoothly transported onto an SiC seed single crystal without clogging, and to provide a method for epitaxially growing high-quality single crystal SiC by using the source material, and high-quality single crystal SiC obtained by the method.

The source material for manufacturing single crystal SiC consists of secondary particles substantially comprising primary particles of each of silica and carbon and having substantially a spherical form of the secondary particles with diameters of 1 to 90 m. The method for manufacturing the source material for manufacturing single crystal SiC includes a step of producing slurry comprising silica particles, carbon particles and a solvent and a spray-drying step of manufacturing secondary particles containing silica and carbon by spray-drying and granulating the slurry in a vaporizing device.

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IKARI MASANORI
KANENIWA TORU
ABE TAKAO

JP2006216748A

February 21, 2008

August 09, 2006

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SHINETSU CHEMICAL CO

C30B29/36; C30B1/10; H01L33/34

JPH04270199A	1992-09-25
JPS6122000A	1986-01-30
JPH03215399A	1991-09-20
JP2001233697A	2001-08-28
JP2004099414A	2004-04-02

Yasuhiro Noguchi

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