To provide a sputtering apparatus which makes partial pressures of a reaction gas on a plurality of target surfaces be mutually equal and sputters each target with a mutually equal rate.
The sputtering apparatus includes: a plurality of targets 211 to 214 which are arranged mutually apart in one line; and target devices 2012, 2034, wherein adjacent two targets 211 to 214 are set to be one set and a voltage is applied between one set of targets 211 to 214. Each target device 2012 or 2034 includes: partition walls 231 to 234 which are arranged opposite to the side faces of one set of the targets 211 to 214; gas introducing ports 281 to 284 provided between the partition walls 231 to 234 and the targets 211 to 214; and main exhaust ports 2512, 2534 which are provided on the bottom surface of a vacuum container 11. The reaction gas introduced from the gas introducing ports 281 to 284 is evacuated from the main exhaust ports 2512, 2534 through between one set of the targets 211 to 214.
ARAI MAKOTO
KIYOTA JUNYA
JP2009057608A | 2009-03-19 | |||
JP4574739B1 | 2010-11-04 | |||
JP2001240960A | 2001-09-04 | |||
JPS6254078A | 1987-03-09 | |||
JPH05275385A | 1993-10-22 |
US20050205421A1 | 2005-09-22 | |||
WO2011029096A2 | 2011-03-10 |
Hideki Abe