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Title:
EL発光層形成用スパッタリングターゲットとその製造方法
Document Type and Number:
Japanese Patent JP5028962
Kind Code:
B2
Abstract:

To provide a sputtering target for EL light emitting layer formation containing O in a sufficiently low content and also having high density, and to provide a method for manufacturing the same.

The method comprises mainly: an alloying step where metal raw materials at least composed of divalent metal, trivalent metal and luminescence center metal are dissolved to obtain an alloy; a pulverizing step where the obtained alloy is pulverized to obtain alloy powder; a molding stage where, using the obtained alloy powder, a molded product is obtained; and a sintering step where the obtained molded product is sintered to obtain a sintered compact. The alloying step is performed in a vacuum or an inert atmosphere, and also, in the alloying step, upon the melting of the metal raw materials, a water-cooled crucible made of copper is used.

COPYRIGHT: (C)2008,JPO&INPIT


Inventors:
Iwao Sato
Toshiyuki Osako
Application Number:
JP2006304463A
Publication Date:
September 19, 2012
Filing Date:
November 09, 2006
Export Citation:
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Assignee:
Sumitomo Metal Mining Co., Ltd.
International Classes:
C23C14/34; B22F1/00; B22F3/14; B22F3/15; B22F9/04; C09K11/00; C09K11/08; C09K11/62; C09K11/64; C22C1/02; C22C24/00; H05B33/10; H05B33/14
Domestic Patent References:
JP2006219720A
JP2006265449A
JP2005063812A
JP2005063813A
JP2006342420A
JP2007526602A
JP2004533095A
Attorney, Agent or Firm:
Kameda Tetsuaki



 
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