Title:
SPUTTERING TARGET, AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3792007
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide the sputtering target consisting of the silicide of low mole ratio in which generation of particles during the sputtering is reduced by specifying the composition consisting of Si, W, Ta, Ti, etc., limiting the quantity of impurities, and specifying the density ratio.
SOLUTION: The sputtering target is obtained in which the composition is MSix (where, M is W, Ta, Ti, x=0.5-1.1), the density ratio is ≥95%, the content of impurities is preferably Na≤0.1 ppm, K≤0.1 ppm, U≤1 ppb, Th≤1 ppb, Fe≤5 ppm, Cr≤5 ppm, and Ni≤5 ppm, the density ratio is ≥95%. The target is provided by pulverizing the synthesized silicide powder of the above composition, sieving the powder to regulate the mean grain size to be 5-20 μm, sintering the powder directly or after being hot-pressed once, and achieving the HIP treatment under high pressure. The treatment temperature is maximum 2000°C with WSi, maximum 1800°C with TiSi, and maximum 2100°C with TaSi.
Inventors:
Osamu Kanano
Shuichi Irimada
Shuichi Irimada
Application Number:
JP16969197A
Publication Date:
June 28, 2006
Filing Date:
June 12, 1997
Export Citation:
Assignee:
Nikko Materials Co., Ltd.
International Classes:
C04B35/58; C23C14/34; B22F3/14; C23C14/06; B22F3/15; (IPC1-7): C23C14/34; C04B35/58; C23C14/06; //B22F3/15
Domestic Patent References:
| JP9111363A | ||||
| JP6221765A | ||||
| JP791636B2 | ||||
| JP10273776A |
Attorney, Agent or Firm:
Motohiro Kurauchi
Hiroshi Kazama
Hiroshi Kazama
Previous Patent: GLASS DESTRUCTION DETECTION DEVICE
Next Patent: FOUNDATION HARDWARE AND LOCKING STRUCTURE USING THE SAME
Next Patent: FOUNDATION HARDWARE AND LOCKING STRUCTURE USING THE SAME