PURPOSE: To form a static induction transistor into a lateral structure, wherein a current flows in the direction parallel to the surface of a substrate, and to facilitate the manufacture of the transistor by a method wherein a semiconductor film is formed on the substrate in the direction parallel to the surface of the substrate, a drain region is formed on the inner side of the semiconductor film and source regions and gate regions are respectively formed on one side of the film and on the other side of the film in such a way that they oppose to each other with the film between the one side and the other side.

CONSTITUTION: A non-doped GaAs film 5 is formed on a substrate 1 into a U-shaped section and a drain region 2 consisting of GaAs is formed on the inner side of the film 5. Gate regions 3 consisting of P-type GaAs and source regions 4 consisting of N-type GaAs are respectively formed on both outer sides of the film 5 with the film 5 between the both outer sides. The regions 3 and the regions 4 are formed in such a way that they are made to oppose to each other and are made to parallel-connect in the direction parallel to the surface of the substrate 1. Accordingly, it becomes possible that a current can be made to flow in the direction parallel to the surface of the substrate 1 by a voltage control to the regions 3. Thereby, the integration of a static induction transistor with other circuit element is facilitated.