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Title:
STRATIFIED ANTI-FERROELECTRIC, CAPACITOR AND MEMORY AND MANUFACTURING METHODS FOR THESE
Document Type and Number:
Japanese Patent JP2005216951
Kind Code:
A
Abstract:

To obtain a multi-valued memory maintaining excellent polarization-fatigue characteristics and a memory using polarization characteristics and capacitive characteristics having a gentle temperature coefficient.

A capacitor has stratified anti-ferroelectric containing a metallic oxide composed of a pyrochlore type oxide having a formula A2B2O7 as a capacitive film and an interface-layer oxide having a formula Me2O3. Here, A in the formula A2B2O7 represents an A-site atom selected from a metal group composed of Ba, Bi, Sr, Pb, Ca, K, Na and La. B in the formula A2B2O7 represents a B-site atom selected from a metal group composed of Ti, Zr, Ta, Hf, Mo, W and Nb. Me in the formula Me2O3 represents the atom of the interface-layer oxide selected from a metal group composed of Bi, Sc, Y, La, Sb, Cr and Tl.


Inventors:
HAYASHI SHINICHIRO
Application Number:
JP2004018712A
Publication Date:
August 11, 2005
Filing Date:
January 27, 2004
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/8246; H01L27/105; H01L21/316; (IPC1-7): H01L27/105; H01L21/316
Attorney, Agent or Firm:
Akio Miyai
Makoto Ito