Title:
Stress compensation for the large area gallium nitriding thing on a semiconductor substrate, or other nitriding thing base structures
Document Type and Number:
Japanese Patent JP5946771
Kind Code:
B2
Abstract:
A method includes forming a stress compensating stack over a substrate, where the stress compensating stack has compressive stress on the substrate. The method also includes forming one or more Group III-nitride islands over the substrate, where the one or more Group III-nitride islands have tensile stress on the substrate. The method further includes at least partially counteracting the tensile stress from the one or more Group III-nitride islands using the compressive stress from the stress compensating stack. Forming the stress compensating stack could include forming one or more oxide layers and one or more nitride layers over the substrate. The one or more oxide layers can have compressive stress, the one or more nitride layers can have tensile stress, and the oxide and nitride layers could collectively have compressive stress. Thicknesses of the oxide and nitride layers can be selected to provide the desired amount of stress compensation.
Inventors:
Jamal Lambdani
Application Number:
JP2012544571A
Publication Date:
July 06, 2016
Filing Date:
November 30, 2010
Export Citation:
Assignee:
NATIONAL SEMICONDUCTOR CORPORATION
International Classes:
H01L21/205; C23C16/34; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP11186178A | ||||
| JP2009130010A | ||||
| JP3024268A |
Attorney, Agent or Firm:
Kyozo Katayose