Title:
STRUCTURE AND DEVICE FOR DETECTING TEMPERATURE OF SEMICONDUCTOR SWITCH ELEMENT CHIP, AND SEMICONDUCTOR RELAY
Document Type and Number:
Japanese Patent JP3509623
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent malfunction due to noise and to make the chip small-sized.
SOLUTION: A diode 41 which has a negative linear temperature characteristic of voltage is formed on the same semiconductor chip 30 with a power MOS 32 as an element for temperature detection and a resistor 42 and a capacitor 43 constituting a low-pass filter connected across the diode 41 are formed. This low-pass filter removes external noise of high frequency as electromagnetic interference, so malfunction due to noise can be prevented. The capacitor 43 is formed below a bonding pad where nothing is normally formed while clamping a gate oxide film with the electrodes. Consequently, the chip can be made small-sized.
Inventors:
Aoki, Hirofumi
Application Number:
JP11770399A
Publication Date:
March 22, 2004
Filing Date:
April 26, 1999
Export Citation:
Assignee:
TOYOTA MOTOR CORP
International Classes:
H03K17/14; G01K7/01; (IPC1-7): H03K17/14; G01K7/01
Attorney, Agent or Firm:
吉田 研二 （外１名）