Title:
下地基板、下地基板の製法及び１３族窒化物結晶の製法
Document Type and Number:
Japanese Patent JP6816008
Kind Code:
B2
Abstract:
An underlying substrate 14 according to an embodiment of the present invention includes a seed crystal layer 16 of a group 13 nitride crystal on a' sapphire substrate 15. Projections 16a and recesses 16b repeatedly appear in stripe shapes at a principal surface of the seed crystal layer 16. The projections 16a have a level difference ha of 0.3 to 40 µm and a width wa of 5 to 100 µm, and the recesses 16b have a bottom thickness tb of 2 µm or more and a width wb of 50 to 500 µm.
Inventors:
Takayuki Hirao
Makoto Iwai
Katsuhiro Imai
Takashi Yoshino
Makoto Iwai
Katsuhiro Imai
Takashi Yoshino
Application Number:
JP2017546474A
Publication Date:
January 20, 2021
Filing Date:
September 30, 2016
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
C30B29/38; C30B19/12; H01L21/20
Domestic Patent References:
| JP2013063908A | ||||
| JP2010024090A | ||||
| JP2013193915A |
Attorney, Agent or Firm:
Aitec International Patent Office