Title:
SUBSTRATE FOR EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JPH0684794
Kind Code:
A
Abstract:
PURPOSE: To suppress the occurrence of a defect in a layer formed on the surface of a silicon substrate by epitaxial growth.
CONSTITUTION: A film (silicon oxide film 3, silicon nitride film, polycrystalline silicon film etc.) is integrally formed on the entire or partial rear surface of a silicon substrate 1, on the front surface of which epitaxial growth is performed, so as to prevent the thermal deformation of the substrate 11 or suppress the occurrence of a defect in an epitaxially grown layer. Therefore, the manufacturing yield of an element can be improved.
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Inventors:
KIKUCHI HIROMASA
Application Number:
JP25573792A
Publication Date:
March 25, 1994
Filing Date:
August 31, 1992
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/02; H01L21/20; (IPC1-7): H01L21/20; H01L21/02
Attorney, Agent or Firm:
Suzuki Akio