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Title:
成膜用基板および成膜方法
Document Type and Number:
Japanese Patent JP5111427
Kind Code:
B2
Abstract:

To provide a substrate for deposition having high utilization efficiency of a material, and a deposition method having high utilization efficiency of the material by utilizing the substrate for deposition.

The substrate 150 for deposition in which a plurality of regions having different deposition characteristics are formed on the first side of a support substrate 100 is prepared, the material which can be deposited is deposited on the first side of the substrate 150 for deposition, the first side of the substrate 150 for deposition on which the material is deposited and a substrate to be deposited are disposed face to face, and the material may be preferably deposited on a plurality of the substrates to be deposited from one piece of the substrate 150 for deposition by using a plurality of deposition methods corresponding to the different deposition characteristics one by one.

COPYRIGHT: (C)2011,JPO&INPIT


Inventors:
Rena Takahashi
Takuya Tsurume
Application Number:
JP2009099803A
Publication Date:
January 09, 2013
Filing Date:
April 16, 2009
Export Citation:
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Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H05B33/02; C23C14/24; G09F9/30; H01L27/32; H01L51/50; H05B33/10; H05B33/12; H05B33/24
Domestic Patent References:
JP2007281159A
JP2006309995A
JP4265795A
JP2003215323A
JP2008059961A
JP2003092181A
JP11237504A



 
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