Title:
SUBSTRATE HEAT TREATMENT METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, CHEMICAL VAPOR DEPOSITION METHOD AND DISPLAY
Document Type and Number:
Japanese Patent JP2003178990
Kind Code:
A
Abstract:
To provide a method of manufacturing thin film semiconductor device which assures excellent transistor characteristic through low temperature process.
After deposition of an amorphous semiconductor film, it is subjected to heat treatment under the acidic atmosphere. A thin film transistor (TFT) having excellent transistor characteristic in the low temperature processes may be manufactured uniformly in the wider area with the simplified method.
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Inventors:
MIYASAKA MITSUTOSHI
Application Number:
JP2002256848A
Publication Date:
June 27, 2003
Filing Date:
December 21, 1993
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/205; H01L21/20; H01L21/336; H01L29/786; (IPC1-7): H01L21/205; H01L21/20; H01L21/336; H01L29/786
Attorney, Agent or Firm:
Masayanagi Ueyanagi (2 outside)