Title:
基板処理装置、プラズマ生成装置、反応管、プラズマ生成方法、基板処理方法、半導体装置の製造方法およびプログラム
Document Type and Number:
Japanese Patent JP7464638
Kind Code:
B2
Abstract:
There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.
Inventors:
Akihiro Sato
Go Takeda
Hirochi Shiyu
Go Takeda
Hirochi Shiyu
Application Number:
JP2022019143A
Publication Date:
April 09, 2024
Filing Date:
February 10, 2022
Export Citation:
Assignee:
KOKUSAI ELECTRIC Inc.
International Classes:
C23C16/455; C23C16/509; H01L21/31; H01L21/318; H05H1/46
Domestic Patent References:
| JP202074409A | ||||
| JP2021101479A | ||||
| JP2010027702A | ||||
| JP2014049541A |
Foreign References:
| WO2018016131A1 |
Attorney, Agent or Firm:
Polaire Patent Attorneys Corporation