Title:
SUBSTRATE FOR SEMICONDUCTOR DEVICE, SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP3754897
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate for a semiconductor device and an SOI substrate which are suitable for making a crystal layer, such as a semiconductor layer and a ferrodielectric layer to make it grow via an insulation layer on another semiconductor layer and can improve electrical insulation property, etch stopping property or repetitive vibration characteristic of a micro actuator or the like, and to provide a manufacturing method therefor.
SOLUTION: A crystal layer of a crystalline insulating matter 3 is formed on a silicon substrate 1, which is heated to 400°C or higher by scattering a metal oxide, constituting a crystalline insulating layer in an inert gas, such as Ar from a target. An amorphous, insulating silicon compound layer (oxide film) 2 is formed on the silicon substrate 1 through oxygen diffusion during temperature holding period, after film formation or diffusion of oxygen during cooling. The concentration of a component element of a material constituting the crystalline insulating layer 3 to be included in the oxide film 2 formed between the silicon substrate 1 and the crystalline insulating layer 3 is set at 10 at.% or less, preferably 5 at.% or less.
Inventors:
Umino Akira
Takeyoshi Matsuda
Tetsuro Fukui
Takao Yonehara
Kiyotaka Wasa
Takeyoshi Matsuda
Tetsuro Fukui
Takao Yonehara
Kiyotaka Wasa
Application Number:
JP2001033808A
Publication Date:
March 15, 2006
Filing Date:
February 09, 2001
Export Citation:
Assignee:
Canon Inc
International Classes:
B81C1/00; H01L27/12; C23C14/08; H01L21/20; H01L21/203; H01L21/76; H01L21/762; H01L21/8246; H01L21/8247; H01L27/105; H01L29/788; H01L29/792; (IPC1-7): H01L27/12; B81C1/00; C23C14/08; H01L21/203; H01L27/105; H01L21/8247; H01L29/788; H01L29/792
Domestic Patent References:
| JP63015442A | ||||
| JP62084551A | ||||
| JP8181289A | ||||
| JP10265948A | ||||
| JP62193170A | ||||
| JP10144607A | ||||
| JP9162088A | ||||
| JP7150361A | ||||
| JP2000021860A |
Attorney, Agent or Firm:
Yoshiro Sakamoto