Title:
SUBSTRATE FOR THIN FILM OPTICAL WAVEGUIDE
Document Type and Number:
Japanese Patent JPS5929472
Kind Code:
A
Abstract:
PURPOSE:To form the thin film optical waveguide of high integration by a method wherein a thin film optical waveguide layer is provided on an insulating substrate and, at the same time, a photo-detecting section of heterogenous junction is formed on the interface of said optical waveguide layer. CONSTITUTION:A semiconductor substrate consists of at least a kind of sapphire and spinel. Besides, a thin film optical waveguide layer consists of at least a kind of II-VI group semiconductor of ZnO, ZnSe, ZnS, CdO, CdSe, CdS and the like. The prinicpal part of a photo-detecting unit consists of heterogenous junction provided on the interface 13 of a thin film optical waveguide layer 12 and an insulating substrate 11 with a semiconductor layer 21 composed of a kind of Ge, Si, GaAs and InP or compound thereof. Normally, these optical waveguide layer and heterogenous junction are formed using a vacuum evaporating method or a sputtering vapor deposition method. In this case, the film thickness of the optical waveguide layer is formed in the wavelength of light to be transmitted or thereabout, and also a P type or an N type semiconductor is used for the semiconductor layer of the photo-detecting section, and an N type semiconductor is used for the optical waveguide layer. In this case, a photo signal is detected from the electrode 22, provided on the semiconductor layer 21, and the electrode 23 provided on the surface of the optical waveguide layer 12 on the photo-detecting section.
Inventors:
WASA KIYOTAKA
OUCHI KENZOU
SETSUNE KENTAROU
KAWAGUCHI TAKAO
ADACHI HIDEAKI
OUCHI KENZOU
SETSUNE KENTAROU
KAWAGUCHI TAKAO
ADACHI HIDEAKI
Application Number:
JP14063282A
Publication Date:
February 16, 1984
Filing Date:
August 12, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
G02B6/122; G02B6/42; H01L27/14; H01L31/02; (IPC1-7): G02B5/174; H01L27/14; H01L31/02
Attorney, Agent or Firm:
Toshio Nakao