Title:
SUPER FLAT TRANSPARENT CONDUCTIVE FILM AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP3531865
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a super flat transparent conductive film which can improve the characteristics of a transparent electrode for an organic EL display, an oxide LED, and LD.
SOLUTION: The super flat transparent conductive film like ITO, characterized by the average surface roughness of 1 nm or less, is formed on a super flat glass substrate or on a crystalline substrate, for example, on a YSZ single crystal substrate, and has a terrace-step structure reflecting the crystal structure of the transparent conductive film material. When the film is formed by one method of either pulse-laser evaporation method, sputtering method, CVD method, MO-CDV method, or MBE method, the substrate is kept in the temperature of 800°C-1500°C. By removing an assist of energy except heat or undesirable substance adsorbed on the surface, the temperature can be kept in 800°C or less.
Inventors:
Ota, Hiromichi
Orita, Masahiro
Hosono, Hideo
Hirano, Masahiro
Orita, Masahiro
Hosono, Hideo
Hirano, Masahiro
Application Number:
JP2000205941A
Publication Date:
May 31, 2004
Filing Date:
July 06, 2000
Export Citation:
Assignee:
JAPAN SCIENCE & TECHNOLOGY CORP
Ota, Hiromichi
Orita, Masahiro
Ota, Hiromichi
Orita, Masahiro
International Classes:
C23C14/08; C23C16/40; H01B5/14; H01B13/00; H01L21/28; H01L21/285; H01L33/28; H05B33/28; H01L33/42; (IPC1-7): H01B5/14; C23C14/08; C23C16/40; H01B13/00; H01L21/285; H01L33/00; H05B33/28
Attorney, Agent or Firm:
西 義之