Title:
SURFACE ACOUSTIC WAVE DEVICE
Document Type and Number:
Japanese Patent JP3777931
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To solve problems of a conventional surface acoustic wave device that cannot have made a k2 compatible with a sound velocity and a temperature characteristic because a KNbO3 crystal substrate is excellent in the k2 but its sound velocity is slower than that of a SrTiO3 substrate or a CaTiO3 that belongs to the same perovskite group oxide as the KNbO3 crystal substrate and its temperature characteristic is inferior to that of a SiO2 substrate and that cannot have produced epitaxial growing on a Si substrate that is important in the monolithic processing in a direction of a pseudo cubic system (100) equivalent to that of a Y-XKNbO3 crystal substrate.
SOLUTION: A K1-xNaxNb1-yTayO3 (0≤x≤1, 0≤y<1) piezoeletric thin film 3 oriented as the pseudo cubic system (10) is epitaxially grown on a Si substrate oriented in the (100) via a NaCl group oxide MO buffer layer 2 to realize the surface acoustic wave element having a high k2, a high sound velocity and a zero temperature characteristic.
Inventors:
Higuchi Tenkou
Setsuya Iwashita
Hiroshi Miyazawa
Setsuya Iwashita
Hiroshi Miyazawa
Application Number:
JP2000002565A
Publication Date:
May 24, 2006
Filing Date:
January 11, 2000
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
H03H9/25; H03H9/145; (IPC1-7): H03H9/25; H03H9/145
Domestic Patent References:
| JP11191721A | ||||
| JP10032464A | ||||
| JP10270978A | ||||
| JP11122073A |
Attorney, Agent or Firm:
Masahiko Ueyanagi
Osamu Suzawa
Osamu Suzawa