SURFACE CLEANING METHOD - NIPPON DENKI KK

Title:

SURFACE CLEANING METHOD

Document Type and Number:

Japanese Patent JP2643899

Kind Code:

B2

Abstract:

PURPOSE: To easily obtain a flat semiconductor surface by removing the oxidized film on the surface of a semiconductor layer by a specific method in a surface cleaning method of a molecular beam crystal growth method.
CONSTITUTION: A solid halogen compd. 2 (e.g.: zinc chloride) held in, for example, a crucible 1 in high vacuum is heated by, for example, a heater 3 and the molecular beam thereof is cast to the surface of the semiconductor layer 4 consisting of, for example, GaAs to remove the oxidized film 5 on the surface of the semiconductor layer 4. Consequently, the flat surface having, for example, a surface structure of (2×1) is obtd. Then, a crystalline ZnSe film having decreased defects is obtd. by irradiating the semiconductor film 4 with the molecular beam of, for example, zinc 6 and selenium 7.

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Inventors:

IWATA HIROSHI

Application Number:

JP4753395A

Publication Date:

August 20, 1997

Filing Date:

March 07, 1995

Export Citation:

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Assignee:

NIPPON DENKI KK

International Classes:

C30B33/12; H01L21/203; H01L21/302; H01L21/3065; (IPC1-7): C30B33/12; H01L21/203; H01L21/3065

Attorney, Agent or Firm:

Naoki Kyomoto (2 outside)

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