Title:
SURFACE EMITTING LASER ON SILICON SUBSTRATE
Document Type and Number:
Japanese Patent JP3123026
Kind Code:
B2
Abstract:
PURPOSE: To provide a method of manufacturing a high quality surface emitting laser on a silicon substrate free from cracking.
CONSTITUTION: In a surface emitting laser of a structure, wherein an optical resonator is constituted of first and second light reflection layers 3 and 17 by laminating a buffer layer 2 consisting of a semiconductor, the first light reflection layer 3 consisting of a semiconductor, a cavity layer comprising an active layer and the second light reflection layer 17 consisting of a semiconductor or a dielectric material in the order of the layers 2 and 3, the cavity layer and the layer 17 on the main surface of an Si substrate 1 to make a laser oscillation take place, an alternate layer 4 consisting of GaAs/AlAs is included in the layer 2.
Inventors:
Taketaka Kohama
Yoshitaka Oiso
Sugo Mitsuru
Minoru Okamoto
Yoshitaka Oiso
Sugo Mitsuru
Minoru Okamoto
Application Number:
JP22383392A
Publication Date:
January 09, 2001
Filing Date:
August 24, 1992
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01S5/00; H01S5/042; H01S5/183; H01S5/02; H01S5/42; (IPC1-7): H01S5/183
Domestic Patent References:
| JP3297185A | ||||
| JP6214465A | ||||
| JP4171783A |
Attorney, Agent or Firm:
Tadataka Mitsuishi (2 outside)