SURFACE EMITTING TYPE SEMICONDUCTOR LASER IN LONG WAVELENGTH RANGE

Japanese Patent JP3123030

B2

PURPOSE: To obtain a high reflectivity with smaller logarithm as compared with the logarithm of InP, InGaAsP by using a buffer layer of smaller lattice constant than that of InP and InAlAs, InGaAsP or InAlP, InGaP which match in lattice with the buffer layer for two kinds of semiconductor films which make a reflecting layer for light.
CONSTITUTION: A layer 2-8 for distortion and a buffer layer 2-7 are grown on an InP substrate 2-9 by a vapor growth method for organometal. Next, a first reflecting layer 2-5 for light is formed by alternately growing an n-type InAlAs and InGaAsP 2-5. Consecutively, an n-type InGaP cladding layer 2-5, a p-type InGaAs activated layer 2-4, a p-type InGaP cladding layer 2-3 and a p-type InGaAsP cap layer are grown. After that, 12 pairs of SiO2 and TiO2 are alternately evaporated for a second reflecting layer 2-2 for light. Next, elements are patterned in a doughnut-like form, and the insulation between the elements is made with polyimide, and an antireflection film and an electrode 2-11 are evaporated on the substrate side (2 to 12), and an electrode 2-1 is formed on the upside.

JPH0311783	SURFACE INPUT-OUTPUT BISTABLE SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER ARRAY
JPH06233778	LASER SYSTEM FOR LASER DIAGNOSIS AND TREATMENT

Yoshitaka Oiso
Taketaka Kohama
Takashi Tadokoro
Takashi Kurokawa

JP27970192A

January 09, 2001

October 19, 1992

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Nippon Telegraph and Telephone Corporation

H01S5/00; H01S5/183; H01S5/42; (IPC1-7): H01S5/183

JP3133188A
JP2231784A
JP3283481A
JP4171783A
JP4263482A
JP2130988A
JP2125612A

Tadataka Mitsuishi (2 outside)

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