PURPOSE: To realize highly sensitive microanalysis through surface processing, in which the impurity contamination is limited to the minimum, so as to apply this method to a micro-impurity-analyzing apparatus for the production of a semiconductor by applying a smoothing process to the surface of an object to be processed and specifying both surface-roughness and metal impurity elution.
CONSTITUTION: In any semiconductor, the content of a trace element mixed in its material can be a main factor to impair the quality of a product. Therefore, a prescribed analyzing apparatus is used to analyze the material. The analyzing apparatus is, however, contaminated by a metal tool, etc., during machining or contaminated by the elution of metal impurity when the apparatus is in use. In processing the surface of such an analyzing apparatus, the smoothing processing is applied to the surface of an object to be processed. In this case, the surface roughness is set at ±0.5μmP-V or less, while the elution of the metal impurity is set to 0.5ng or less. By applying the surface processing, in which the impurity-contamination may be limited to the minimum, highly sensitive microanalysis can be realized.
SUZUKI ISAO
FUKUDA MASAYUKI
MATSUMOTO MEIJI
HAYASHI MASARU
HASHIMOTO MASAHIRO
TAKAMATSU KOJI
YOSHIDA TAKASHI
MATSUNAGA HIDEKI
