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Title:
SURFACE TREATMENT METHOD, AND VACUUM VESSEL
Document Type and Number:
Japanese Patent JP2004115899
Kind Code:
A
Abstract:

To provide a surface treatment method by which a homogeneous film having a reduced gas discharge is formed on all surfaces in vacuum vessels such as the inner wall of a vacuum vessel and the inner part of a vacuum vessel in a vacuum system, and to provide the vacuum vessels.

A silicon compound comprising hydrogen and carbon, and at least one kind of element selected from nitrogen and oxygen is used as a raw material. The raw material is introduced in a gaseous state into an evacuated treatment vessel, and plasma by the raw material is formed. Thus, a film comprising silicon, hydrogen, and carbon, and at least one kind of element selected from oxygen and nitrogen is deposited on the surfaces of the vacuum vessels to be treated stored inside the evacuated treatment vessel.


Inventors:
INAYOSHI SAKAE
SUMIYA TORU
Application Number:
JP2002284396A
Publication Date:
April 15, 2004
Filing Date:
September 27, 2002
Export Citation:
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Assignee:
ULVAC CORP
NANOTEC CORP
International Classes:
C23C16/44; C23C16/42; H01L21/31; (IPC1-7): C23C16/44; C23C16/42; H01L21/31
Attorney, Agent or Firm:
Shimizu Yoshi Hiro
Shinichi Abe
Yuji Tsujida